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Si3460BDV
Vishay Siliconix
N-Channel 20-V (D-S) MOSFET
PRODUCT SUMMARY
FEATURES
V DS (V)
20
R DS(on) ( Ω )
0.027 at V GS = 4.5 V
0.032 at V GS = 2.5 V
0.040 at V GS = 1.8 V
I D (A) a
8
8
8
Q g (Typ.)
9 nC
? Halogen-free According to IEC 61249-2-21
Definition
? TrenchFET ? Power MOSFET
? Compliant to RoHS Directive 2002/95/EC
APPLICATIONS
? Load Switch for Portable Applications
? Load Switch for Low Voltage Bus
TSOP-6
Top View
D
1
6
D
D
(1, 2, 5, 6)
3 mm D
2
5
D
Marking Code
G
3
4
S
AF
XXX
Lot Tracea b ility
G
and Date Code
Part # Code
2. 8 5 mm
Orderin g Information: Si3460BD V -T1-E3 (Lead (P b )-free)
Si3460BD V -T1-GE3 (Lead (P b )-free and Halogen-free)
ABSOLUTE MAXIMUM RATINGS T A = 25 °C, unless otherwise noted
(3)
(4)
S
N -Channel MOSFET
Parameter
Drain-Source Voltage
Gate-Source Voltage
T C = 25 °C
Symbol
V DS
V GS
Limit
20
±8
8 a
Unit
V
Continuous Drain Current (T J = 150 °C)
Pulsed Drain Current
Continuous Source-Drain Diode Current
T C = 70 °C
T A = 25 °C
T A = 70 °C
T C = 25 °C
T A = 25 °C
T C = 25 °C
I D
I DM
I S
7.1
6.7 b, c
5.4 b, c
20
2.9
1.7 b, c
3.5
A
Maximum Power Dissipation
T C = 70 °C
T A = 25 °C
P D
2.2
2 b, c
W
T A = 70 °C
1.3 b, c
Operating Junction and Storage Temperature Range
Soldering Recommendations (Peak Temperature) d, e
T J , T stg
- 55 to 150
260
°C
THERMAL RESISTANCE RATINGS
Parameter
Symbol
Typical
Maximum
Unit
Maximum Junction-to-Ambient b, d
Maximum Junction-to-Foot (Drain)
t ≤ 5s
Steady State
R thJA
R thJF
50
30
62.5
36
°C/W
Notes:
a. Package limited
b. Surface Mounted on 1" x 1" FR4 board.
c. t = 5 s.
d. Maximum under steady state conditions is 110 °C/W.
Document Number: 74412
S09-1498-Rev. C, 10-Aug-09
www.vishay.com
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